Defects induced by solid state reactions at the tungsten-silicon carbide interface
نویسندگان
چکیده
منابع مشابه
Atomic-Resolution Investigation of Irradiation-Induced Defects in Silicon Carbide
Silicon carbide (SiC) possesses excellent radiation tolerance, thus, SiC and its composites are promising materials for current and future nuclear systems [1]. However, the atomistic processes that underlie the irradiation response are not sufficiently understood, due largely to the limited spatial resolution of conventional analytical tools. Comparing aberration-corrected scanning transmission...
متن کاملObservation of Shear Wave Generation at Bonded Silicon- Carbide Interface
The drive toward higher efficiencies and performance in energy production and transportation equipment has posed a continual challenge for the materials scientists and engineers involved in design and construction of such equipment. The laws of thermodynamics specify that increased efficiency can best be achieved by the use of the highest possible temperatures. As the desired operating temperat...
متن کاملCobalt with tungsten carbide
in the testicular damage caused by indium arsenide and indium phosphide in hamsters during two years after intratracheal instillations. (CIGS) nanocrystal " inks " for printable photovoltaics. Selective sequential dissolution for the determination of inorganic indium compounds in the particulate matter of emissions and workplace air. Current evaluation Conclusion from the previous Monograph (IA...
متن کاملCharacterization of Defects and Heterogeneities in Silicon Nitride and Silicon Carbide by Different NDE Methods
The brittleness of ceramic materials like silicon nitride and silicon carbide makes it necessary to fabricate homogeneous structures and to detect small defects in the region of 10 to 100 microns diameter. In the German program on NDE for the gas turbine therefore a study was made to compare different NDE method.s and to develop new techniqt..es. Tests were made with ultrasonics, microradiograp...
متن کاملNonlinear optical imaging of defects in cubic silicon carbide epilayers
Silicon carbide is one of the most promising materials for power electronic devices capable of operating at extreme conditions. The widespread application of silicon carbide power devices is however limited by the presence of structural defects in silicon carbide epilayers. Our experiment demonstrates that optical second harmonic generation imaging represents a viable solution for characterizin...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2018
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.5011242